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消除磁控溅射Cr薄膜应力环状缺陷的工艺优化

Process Optimization for Eliminating Stress Ring Defects in Magnetron Sputtered Cr Films

  • 摘要: 针对磁控溅射沉积Cr薄膜中出现的周期性同心圆条纹及应力环状缺陷问题,本文提出了一种通过工作气压调控结合双靶共溅射的工艺优化方案。通过系统实验对比了不同气压及靶位布局对应力分布的影响。结果表明,提升工作气压并引入双靶共焦正对溅射技术,可显著增强溅射粒子在输运过程中的散射作用,有效减弱高能粒子对基片的轰击。优化后的工艺成功消除了薄膜表面的同心圆条纹缺陷,并显著改善了应力分布的均匀性,为高质量铬薄膜的制备提供了可重复的技术路径。

     

    Abstract: To address the issues of periodic concentric circular fringes and stress ring defects observed in the magnetron sputtering deposition of Cr thin films, this paper proposes a process optimization strategy combining working pressure regulation with dual-target co-sputtering. The effects of various working pressures and target configurations on stress distribution were systematically investigated and compared through experiments. The results indicate that increasing the working pressure and introducing a dual-target confocal facing sputtering configuration can significantly enhance the scattering of sputtered particles during transport, thereby effectively mitigating the bombardment of high-energy particles on the substrate. The optimized process successfully eliminated the concentric circular fringe defects on the film surface and significantly improved the uniformity of stress distribution, providing a reproducible technical pathway for the fabrication of high-quality chromium thin films.

     

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