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电子束光刻技术介绍与展望

Technological Evolution and Future Development Trends of Electron Beam Lithography

  • 摘要: 电子束光刻(Electron Beam Lithography,EBL)作为能够实现亚微米乃至纳米尺度图形化制造的常用微纳加工技术,凭借其高的加工精度与灵活的图形加工能力,在微纳制造领域扮演着至关重要的角色。文章系统性地回顾了电子束光刻技术的基本物理原理及设备发展脉络。重点阐述了早期基于扫描电子显微镜的高斯束EBL设备,以及为突破写入效率和精度瓶颈而演进的商用变形束与前沿的多束EBL系统,并在此基础上结合最新研究进展探讨了EBL设备及其相关技术未来的发展趋势,以期为相关领域的学术研究与产业发展提供理论支撑与实践参考。

     

    Abstract: Electron Beam Lithography (EBL) stands as a pivotal micro-nano Fabrication technology, indispensable for patterning at sub-micrometer and even nanometer scales. It plays a crucial role in the field of micro-nano Fabrication distinguished by its superior patterning fidelity and exceptional flexibility. This paper presents a systematic review of the fundamental physical principles of EBL and the evolutionary trajectory of its instrumentation. It specifically elaborates on the progression from early Gaussian beam systems based on scanning electron microscopes to the commercial Variable Shaped Beam and cutting-edge Multi-beam systems, which were developed to overcome throughput and precision bottlenecks. Building upon the latest research advancements, this review further discusses the future development trends of EBL systems and their associated technologies. The insights provided aim to offer theoretical support and practical reference for academic research and industrial development in related fields.

     

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