高级检索

笼目结构表面的原子操纵及图形化研究

Research on Atomic Manipulation and Patterning on Kagome Structure Surface

  • 摘要: 原子操纵技术在新型量子结构可控构筑、新奇物性调控和探索新型纳电子器件等领域具有重要作用,应用前景广阔。目前,大多数原子操纵是在单质金属表面如Cu(111)、Au(111)和半导体如Si、InAs等表面进行,而在更加复杂的表面,例如笼目(Kagome)结构表面的原子操纵技术却鲜有涉及。在本研究工作中,我们通过扫描隧道显微镜(STM)超高精度原子操纵技术,首次在笼目结构KV3Sb5的Sb表面实现了钾(K)原子的精确操控及其原子图案化构筑,操控STM探针可控地推动K原子,克服了Sb表面势能起伏对原子定向移动所造成的干扰,成功将K原子进行了单晶格和连续多晶格的精确迁移,并构建出规则的“BIT”原子图案。除此之外,实验表明,Sb表面电荷密度波(CDW)诱导的对称性破缺,为K原子提供了各向异性的势能基准,显著提升了操纵精度。本研究工作不仅拓展了原子操纵技术的应用范围,验证了STM在复杂笼目结构材料表面实现原子级操控的可行性,也为未来新型纳米电子器件在原子尺度的定向设计提供了重要的实验依据。

     

    Abstract: Atomic manipulation technique plays a significant role in the controllable construction of novel quantum structures, the regulation of exotic physical properties, and the exploration of application prospects for new nano-electronic devices. Currently, most atomic manipulations are carried out on metal surfaces such as Cu(111) and Au(111), and on semiconductor surfaces such as Si and InAs. However, atomic manipulation in the field of Kagome structures has rarely been explored. In this research work, we have, for the first time, achieved precise manipulation of potassium (K) atoms and the construction of atomic patterns on the Sb surface of the Kagome KV3Sb5 through the ultra-high precision atomic manipulation technique of scanning tunneling microscopy (STM). By using the STM probe to controllably slide and push K atoms, we have overcome the interference caused by the potential energy fluctuations on the Sb surface to directional atomic movement, successfully migrated K atoms along the lattice basis vectors for single and continuous multiple lattice spacings, and constructed a regular “BIT” atomic pattern. In addition, the experimental results have shown that the anisotropic potential energy benchmark provided for K atoms by the charge density wave (CDW)-induced symmetry breaking on the Sb surface significantly improves the manipulation accuracy. This research not only expands the application scope of atomic manipulation technique and demonstrates the feasibility of STM for atomic-level manipulation on complex Kagome material surfaces, but also provides important experimental evidence for the directional design of future nano-electronic devices at the atomic scale.

     

/

返回文章
返回