Abstract: The cracker source is the core component of ultra-high vacuum molecular beam epitaxy (MBE) equipment, which can be used to grow a variety of III-V semiconductor materials epitaxy such as GaAs, InP, GaSb, etc. Because the ultra-high vacuum is not easy to obtain during the use of MBE, the reliability of the cracker source is very high. In this paper, the principle and method of high stress acceleration test of arsenic cracker source for molecular beam epitaxy equipment are discussed, and the corresponding acceleration test scheme is designed according to the characteristics of the cracker source. Based on the high temperature stress acceleration model, the acceleration factor was determined, the acceleration test profile was developed, and the mean time between failure (MTBF) value of the cracker source was determined to be greater than 5000 h according to the test scheme. The scheme provides a reference for engineering applications for the reliability verification of vacuum devices and scientific instruments with high reliability index and tight number of samples tested.