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载流子注入速率调控实现高效稳定的量子点发光二极管

Efficient and Stable Quantum Dot Light-emitting Diodes via Carrier Injection Rate Regulation

  • 摘要: 基于量子点(QDs)的发光二极管器件(QLEDs)因其出色的色彩饱和度和方便的溶液制造工艺而引起了学术界的极大兴趣。目前,镉基红绿蓝光QLEDs的外量子效率(EQE)都已经达到理论极限,但是还存在严重的载流子注入不平衡的现象,这会导致器件的稳定性和寿命大幅度降低。本文通过一种简单的方法对电子传输层(ETL)进行掺杂处理,从而降低电子迁移率,使器件实现更为平衡的载流子注入。在ZnMgO的乙醇溶液中加入适量的乙醇胺(EA)溶液,胺根离子(NH2)可以填补ZnMgO中的氧空位,从而调控ZnMgO的电子迁移率。对比于控制器件,优化器件的EQE提升到14.6%,电流效率(CE)提升到60.7 cd/A,分别提升了1.87倍和1.94倍,同时峰值亮度达到252402 cd/m2

     

    Abstract: Quantum dot (QDs) based light-emitting diode devices (QLEDs) attracted significant academic interest due to their outstanding color saturation and convenient solution-based manufacturing processes. At present, the external quantum efficiency (EQE) of cadmium-based red, green and blue QLEDs has reached the theoretical limit, but there is still severe carrier injection imbalance, which will lead to a significant reduction in the stability and lifetime of the device. In this work, the electron transport layer (ETL) is doped by a simple method to reduce the electron mobility and achieve a more balanced carrier injection. When an appropriate amount of ethanolamine (EA) solution is added to the ethanol solution of ZnMgO, the amine ion (NH2) can fill the oxygen vacancy in ZnMgO, thereby regulating the electron mobility of ZnMgO. Compared with the control device, the EQE of the optimized device increased to 14.6%, the current efficiency (CE) increased to 60.7 cd/A, increased by 1.87 times and 1.94 times respectively, and the peak brightness reached 252402 cd/m2.

     

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