Abstract: The new structural design of the micro ionization pump and the proposal of new ideas play an important role in solving the current maintenance problems of micro vacuum electronic devices. Micro ionization vacuum gauge and micro sputtering ion pump have many similarities in structure and principle; combining these two devices together can realize two functions at the same time and greatly reduce the overall volume of the semiconductor. This paper designs a micro sputtering ion pump based on a micro ionization vacuum gauge. The ion pump has a good pumping effect in the range of 10⁻³ Pa−10⁻⁴ Pa as a main pump and can maintain the vacuum degree of the system. The improved ion pump has a certain pumping speed in the range of 4×10⁻³−6×10⁻⁴ Pa, and as an auxiliary pump, it can effectively strengthen the pumping speed of the molecular pump in the magnitude of 1×10⁻⁶ Pa, and its ion current is in line with the trend of the internal vacuum, so the structure can be used simultaneously as a cold cathode ionization vacuum gauge and a sputtering ion pump.