Abstract: The temperature control of the reaction chamber in semiconductor thin film deposition technology directly affects the quality and accuracy of products, and the influence of chamber structure on the temperature field was studied. The structural topology design of the intake panel, which is an important component of the chamber, and the theoretical analysis and simulation of the temperature field of the whole chamber are carried out. By comparing the simulation results, the distribution of the temperature field under different cooling conditions is analyzed, and the influence rule of different cooling conditions on the temperature field is summarized. The results show that the different structure of the intake cover has no obvious effect on the chamber temperature field without RF interference. The temperature distribution of the temperature field 2 mm below the spray plate is uniform, and it fluctuates little with the distance between the radiating position and the chamber. Under the interference of RF, the further away the radiating channel is from the chamber, the weaker the control ability of the radiating channel is.