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张丽娜, 高飞, 陆文琪. 玻璃表面中频磁控溅射制备氮化铝薄膜的晶面择优取向调控[J]. 真空科学与技术学报. DOI: 10.13922/j.cnki.cjvst.202407003
引用本文: 张丽娜, 高飞, 陆文琪. 玻璃表面中频磁控溅射制备氮化铝薄膜的晶面择优取向调控[J]. 真空科学与技术学报. DOI: 10.13922/j.cnki.cjvst.202407003
ZHANG Lina, GAO Fei, LU Wenqi. Orientation Control of Aluminum Nitride Thin Films Prepared by Mid-Frequency Magnetron Sputtering on Glass Substrates[J]. CHINESE JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY. DOI: 10.13922/j.cnki.cjvst.202407003
Citation: ZHANG Lina, GAO Fei, LU Wenqi. Orientation Control of Aluminum Nitride Thin Films Prepared by Mid-Frequency Magnetron Sputtering on Glass Substrates[J]. CHINESE JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY. DOI: 10.13922/j.cnki.cjvst.202407003

玻璃表面中频磁控溅射制备氮化铝薄膜的晶面择优取向调控

Orientation Control of Aluminum Nitride Thin Films Prepared by Mid-Frequency Magnetron Sputtering on Glass Substrates

  • 摘要: 氮化铝(AlN)是一种性能优异的陶瓷材料,在微电子、电子元件、高频宽带通信以及功率半导体器件等领域有广泛应用,然而AlN薄膜的一些特性具有显著的各向异性。因此,调控AlN 薄膜的择优取向一直备受科研工作者的关注。本文利用中频反应磁控溅射在玻璃基片上制备AlN薄膜,研究了氮分压、溅射功率以及基片温度对AlN薄膜特性的影响。结果发现,适合制备择优取向AlN薄膜的条件是低气压和200−300℃的基片温度,气相中的氮分压和粒子能量是影响AlN薄膜择优取向的两个主要因素。较低的氮分压和粒子能量有利于获得(100)/(110)择优生长的薄膜,其中相对于(100)取向,较低的沉积能量更有利于(110)的择优生长,而较高的氮分压和粒子能量则有利于获得(002)择优生长的薄膜。研究结果为玻璃表面氮化铝薄膜的制备和应用提供参考。

     

    Abstract: Aluminum nitride (AlN) is a ceramic material with excellent performance, which is widely used in microelectronics, electronic components, high-frequency broadband communication, and power semiconductor devices, but some properties of AlN thin films exhibit significant anisotropy. Therefore, controlling the preferred orientation of AlN thin films has always been a concern for scientific researchers. In this paper, Aluminum nitride (AlN) thin films were prepared on glass substrates by mid-frequency reactive magnetron sputtering. The influence of the nitrogen partial pressure, the sputtering power and the substrate temperature on the crystal structure of the films were investigated. It is found that the condition for the preparation of AlN films with a preferred orientation is low pressure and a substrate temperature between 200−300℃. The most important factors that influence the preferred orientation of the AlN films are the nitrogen partial pressure in the circumstance and the particle energy deposited on the substrate. The results showed that lower nitrogen partial pressure and particle energy are preferable for (100)/(110) oriented growth, with (110) further preferred at lower energies, while higher nitrogen partial pressure and particle energy were beneficial to obtain (002) preferential growth films. The results are helpful in the preparation and application of AlN films on glass substrates.

     

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