Abstract: Nano-vacuum tunneling junction is an important functional component. Its (quasi) ballistic transport mechanism enables it to have lower power consumption and a theoretical transmission speed of up to 3 × 10⁸ m/s, making it an ideal choice for achieving high-performance electronic devices. The preparation of vacuum tunnel junctions using one-dimensional nanomaterials is of great significance in promoting device miniaturization and high integration. This article designs and prepares one-dimensional tunnel junctions using stable zinc oxide nanowires, and investigates their electron emission phenomena under electrostatic field and ultrafast laser excitation. Under the excitation of ultrafast laser, a sixth power high nonlinear emission current and photocurrent modulation have been achieved, which is expected to promote the development of one-dimensional ultrafast nano-vacuum electronic devices.