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印莲华, 刘忠伟. 微波PECVD技术制备高阻隔PET复合薄膜研究[J]. 真空科学与技术学报. DOI: 10.13922/j.cnki.cjvst.202405017
引用本文: 印莲华, 刘忠伟. 微波PECVD技术制备高阻隔PET复合薄膜研究[J]. 真空科学与技术学报. DOI: 10.13922/j.cnki.cjvst.202405017
YIN Lianhua, LIU Zhongwei. Preparation of High Barrier PET Composite Thin Films by Microwave PECVD Technology[J]. CHINESE JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY. DOI: 10.13922/j.cnki.cjvst.202405017
Citation: YIN Lianhua, LIU Zhongwei. Preparation of High Barrier PET Composite Thin Films by Microwave PECVD Technology[J]. CHINESE JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY. DOI: 10.13922/j.cnki.cjvst.202405017

微波PECVD技术制备高阻隔PET复合薄膜研究

Preparation of High Barrier PET Composite Thin Films by Microwave PECVD Technology

  • 摘要: 本文通过在聚对苯二甲酸乙二醇酯(PET)基底表面沉积一定厚度的高阻隔薄膜,改善PET材料阻隔性能。采用微波等离子体化学气相沉积(PECVD)技术在PET基底上沉积氧化硅(SiOx)和类金刚石(DLC)阻隔薄膜,研究不同单体比例制备的薄膜结构、微观形貌和阻隔性能有何异同。结果表明单体比例的不同,显著影响SiOx和DLC薄膜的结构、微观形貌和阻隔性能。一定工艺体条件下,SiOx和DLC薄膜均能充分发挥各自的阻隔作用,降低PET材料的氧气(O2)透过率。采用乙炔(C2H2)和氩气(Ar)混合气体制备DLC薄膜,少量Ar有利于反应单体离解,同时对薄膜表面刻蚀作用较弱,薄膜沉积速度快,表面颗粒致密,可有效阻挡气体渗透,制得的DLC/PET复合膜的氧气透过率可低至0.58 mL·m−2·d,远低于未表面涂布改性PET薄膜的130 mL·m−2·d。以六甲基二硅氧烷(HMDSO)和氧气(O2)为反应单体制备SiOx薄膜,O2比例较高时,薄膜中的硅(Si)、氧(O)元素的键合趋于网状结构和笼状结构,增加了气体的扩散难度,所制备的SiOx/PET复合膜氧气透过率可低至3.69 mL·m−2·d。本研究提出的利用微波PECVD技术在PET基底上沉积阻隔性SiOx或DLC阻隔薄膜,可为高阻隔PET复合薄膜的生产工艺提供有益的参考。

     

    Abstract: In this paper, a high barrier film of a certain thickness is deposited on the surface of the PET substrate to improve the barrier performance of PET films. The microwave PECVD technology was used to deposit SiOx and DLC barrier films on PET substrates. The differences in structure, microstructure, and barrier properties of deposited films with different monomer ratios were studied, and the barrier properties of SiOx/PET and DLC/PET composite films were compared. The results indicate that the different monomer ratios significantly affect the structure, microstructure, and barrier properties of SiOx and DLC films. Under certain process conditions, both SiOx and DLC films can fully exert their respective barrier effects, reducing the oxygen (O2) transmittance of PET materials. DLC thin films were prepared using a mixture of acetylene (C2H2) and argon (Ar) gas. A small amount of Ar was beneficial for the dissociation of reactive monomers, while the etching effect on the surface of the film was weak. The film deposition speed was fast, and the surface particles were dense, which could effectively block gas permeation. The oxygen gas permeability of the DLC/PET composite film prepared can be as low as 0.58 mL·m−2·d, far lower than the 130 mL·m−2·d of unmodified PET film. SiOx thin films were prepared using hexamethyldisiloxane (HMDSO) and oxygen (O2) as reaction monomers. When the O2 ratio was high, the bonding of silicon (Si) and oxygen (O) elements in the films tended towards a mesh-like and cage-like structure, increasing the difficulty of gas diffusion. The oxygen transmittance of the SiOx/PET composite film prepared can be as low as 3.69 mL·m−2·d. This study proposes the application of microwave PECVD technology to deposit barrier SiOx and DLC barrier films on PET substrates, providing useful references for the production process of high barrier PET composite films.

     

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