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李祎龙, 张虹, 金凡亚, 姚明镜, 黄熠, 杨彪, 但敏, 唐语杉, 褚力, 马韦刚. 不同退火气氛对PdNi氢气传感器的性能影响研究[J]. 真空科学与技术学报. DOI: 10.13922/j.cnki.cjvst.202404014
引用本文: 李祎龙, 张虹, 金凡亚, 姚明镜, 黄熠, 杨彪, 但敏, 唐语杉, 褚力, 马韦刚. 不同退火气氛对PdNi氢气传感器的性能影响研究[J]. 真空科学与技术学报. DOI: 10.13922/j.cnki.cjvst.202404014
LI Yilong, ZHANG Hong, JIN Fanya, YAO Mingjing, HUANG Yi, YANG Biao, DAN Min, TANG Yushan, CHU Li, MA Weigang. The Effect of Different Annealing Atmospheres on the Performance of PdNi Hydrogen Sensor[J]. CHINESE JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY. DOI: 10.13922/j.cnki.cjvst.202404014
Citation: LI Yilong, ZHANG Hong, JIN Fanya, YAO Mingjing, HUANG Yi, YANG Biao, DAN Min, TANG Yushan, CHU Li, MA Weigang. The Effect of Different Annealing Atmospheres on the Performance of PdNi Hydrogen Sensor[J]. CHINESE JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY. DOI: 10.13922/j.cnki.cjvst.202404014

不同退火气氛对PdNi氢气传感器的性能影响研究

The Effect of Different Annealing Atmospheres on the Performance of PdNi Hydrogen Sensor

  • 摘要: 氢能是最有望代替化石能源的清洁能源之一,其具有易生产、高效和清洁环保等优点。但当氢气浓度达到4%~75.6%时,极易发生爆炸,所以在氢气的生产制备、储存、运输、分配和应用过程中,氢气浓度监测极为重要。本文采用磁控溅射技术和MEMS工艺制备了薄膜厚度为90 nm的PdNi合金薄膜,针对PdNi合金薄膜氢气传感器的零点漂移问题,采用空气和氩气进行退火处理,退火温度和时间设置为250℃和2 h,随后测试了不同退火气氛下的PdNi合金薄膜氢气传感器的氢敏响应特性。研究表明:空气退火后,PdNi薄膜氧化严重,不能对H2有较好地响应;Ar退火后,PdNi薄膜合金化程度增强,薄膜缺陷减少,降低了PdNi合金薄膜传感器的响应值及灵敏度、延长响应时间,但会使材料结构更加稳定,可以抑制传感器的零点漂移现象,相较于未退火样品优化了50%左右,传感器响应更加稳定。

     

    Abstract: Hydrogen energy is one of the most promising clean energy sources to replace fossil energy, which has the advantages of easy production, high efficiency and clean environmental protection. However, when the hydrogen concentration reaches 4%~75.6%, it is very easy to explode, so in the process of hydrogen production, storage, transportation, distribution and application, hydrogen concentration monitoring is extremely important. In this paper, a PdNi alloy film with a thickness of 90 nm was prepared by magnetron sputtering technology and MEMS process. To solve the zero drift problem of the hydrogen sensor of the PdNi alloy film, air and argon were used for annealing treatment, and the annealing temperature and time were set at 250℃ and 2 h. Subsequently, the hydrogen sensitive response characteristics of PdNi alloy thin film hydrogen sensors under different annealing atmospheres were tested. The results show that after air annealing, the PdNi film is seriously oxidized and cannot respond well to H2. After Ar annealing, the alloying degree of PdNi thin film is enhanced, the film defects are reduced, the response value and sensitivity of the PdNi alloy thin film sensor are reduced, and the response time is prolonged, but the material structure will be more stable, and the zero drift of the sensor can be suppressed, which is about 50% optimized compared with the unannealed sample, and the sensor response is more stable.

     

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