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氢氩比率对石墨烯岛形状的影响

Influence of Hydrogen to Argon Ratio on the Shape of Graphene Islands

  • 摘要: 材料的结构在决定其性能方面起着关键作用。石墨烯的性能除了受到层数的调控之外,石墨烯岛的形状也是影响其性能的一个重要因素。本文使用低压化学气相沉积技术,在液态铜表面生长出石墨烯岛。然后通过调节氢气(H2)和氩气(Ar)的比率,最终实现了多种形状石墨烯岛的可控制备。研究结果表明,正六边形石墨烯岛的生长速率远低于其他形状的石墨烯。基于此,我们提出了一个涵盖不同形状石墨烯岛生长机理的理论模型。这一模型不仅有助于理解石墨烯生长的基本原理,也将进一步指导未来的实验设计和石墨烯材料的开发。

     

    Abstract: The structure of materials plays a crucial role in determining their performance. The performance of graphene is not only controlled by the number of layers, but also by the shape of graphene islands, which is an important factor affecting its performance. In this work, Low pressure chemical vapor deposition technology was used to grow graphene islands on the surface of liquid copper. Then, by adjusting the ratio of hydrogen and argon, controllable preparation of graphene single crystal domains with various shapes was ultimately achieved. The research results indicate that the growth rate of hexagonal graphene single crystals is much lower than that of other shapes of graphene. Based on this phenomenon, a theoretical model was proposed that covers the growth mechanism of graphene islands with different shapes. This model not only helps to understand the basic principle of graphene growth, but also will further guide the future experimental design and the development of graphene materials.

     

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