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吴恩利, 郭晓晓, 柳俊, 赵波. HDPCVD工艺中空洞缺陷和等离子体充电损伤的产生及改进方案[J]. 真空科学与技术学报. DOI: 10.13922/j.cnki.cjvst.202403004
引用本文: 吴恩利, 郭晓晓, 柳俊, 赵波. HDPCVD工艺中空洞缺陷和等离子体充电损伤的产生及改进方案[J]. 真空科学与技术学报. DOI: 10.13922/j.cnki.cjvst.202403004
WU Enli, GUO Xiaoxiao, LIU Jun, ZHAO Bo. Research and Improvement on the Solution of HDPCVD Cavity Defects and Plasma Damage[J]. CHINESE JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY. DOI: 10.13922/j.cnki.cjvst.202403004
Citation: WU Enli, GUO Xiaoxiao, LIU Jun, ZHAO Bo. Research and Improvement on the Solution of HDPCVD Cavity Defects and Plasma Damage[J]. CHINESE JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY. DOI: 10.13922/j.cnki.cjvst.202403004

HDPCVD工艺中空洞缺陷和等离子体充电损伤的产生及改进方案

Research and Improvement on the Solution of HDPCVD Cavity Defects and Plasma Damage

  • 摘要: 随着CMOS工艺不断缩小,高密度等离子体化学气相沉积技术(HDPCVD)由于其绝佳的间隙填充能力、稳定的淀积质量和可靠的电学性能而被广泛用于包括浅槽隔离(STI)、金属前绝缘层(PMD),金属层间绝缘层(IMD)等介质层填充工艺中。然而,HDPCVD技术本身存在一些固有的制约,包括介质填充中的空洞缺陷和等离子体充电损伤等,限制了HDPCVD技术的进一步发展。本文主要对HDPCVD的两种缺陷的形成机理进行了综述,并总结了通过改变工艺配方和工艺流程来改善两种缺陷的方法,最后对HDPCVD技术进行了总结并提出了展望。

     

    Abstract: As CMOS processes have been scaled down, high density plasma assisted chemical vapor deposition (HDPCVD) has been widely used for dielectric layer filling processes, including shallow trench isolation (STI), pre-metallic dielectric layer (PMD), and intermetallic dielectric layer (IMD) due to its excellent gap filling capability, consistent deposition quality and reliable electrical performance. However, there are inherent constraints in HDPCVD technology, including cavity defects in dielectric filling and charging damage, which limit the further development of HDPCVD technology. This paper focuses on the mechanism of formation of both defects and their improvement by changing the process formulation and process flow, and finally concludes and presents an outlook.

     

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