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CdZnSe/ZnSe/ZnSeS量子点材料的制备及其量子点电致发光器件性能研究

Synthesis of CdZnSe/ZnSe/ZnSeS Quantum Dot Materials and Performance in Quantum Dot Electroluminescent Devices

  • 摘要: 量子点(QDs)材料由于其出色单色性,发光可调等优点,在电致器件方面得到了快速的发展。文章研究通过物理方法在QDs核生长的过程中用溶剂稀释单体的浓度,减少QDs核的生长时间,从而可在不改变化学成分比例的基础上改变QDs的发光波长。进一步通过包覆ZnSe与ZnSeS壳层对发光波长进行调制,最终得到光致波长在540 nm的绿色QDs。通过对比实验以及LaMer模型解释了发生变色的原理。仅在核的生长阶段进行干涉才能控制QDs的发光峰位。同时发现提高QDs外壳的包覆温度对QDs的缺陷的减少有积极作用。随后将得到的QDs用于制备量子点电致发光器件,在8 V电压下得到了348993 Cd/m2的亮度,以及32 Cd/A的电流效率。另外,该方法可以为其它类型的由热注入法制备的纳米材料制备提供新的思路。

     

    Abstract: Quantum dots (QDs) materials are rapidly developing in the field of electrochromic devices due to their excellent monochromatic properties and tunable luminescence. In this paper, we investigate the physical method of reducing the growth time of QDs by diluting the concentration of monomer with solvent during the growth of QDs nuclei, which can change the luminescence wavelength of QDs without changing the chemical composition ratio. Further modulation of the luminescence wavelength is achieved by growing the ZnSe and ZnSeS shell layers, resulting in green QDs with a photoluminescence wavelength of 540 nm. The principle of color change is explained by comparative experiments as well as by the LaMer model. The luminescence peak position of QDs can be controlled only by interfering with the growth phase of the nucleus. We also found that increasing the cladding temperature of the QDs shell had a positive effect on the reduction of defects in the QDs. The obtained QDs were subsequently used to prepare quantum dot electroluminescent devices, and a brightness of 348993 Cd/m2 and a current efficiency of 32 Cd/A were obtained at 8 V. In addition, the method can provide new ideas for the preparation of other types of nanomaterials prepared by the thermal injection method.

     

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