InAs/GaAs自组织量子点的可控分子束外延生长及其新型光电器件研究

High Quality InAs/GaAs Self-Assembled Quantum Dots Grown by Molecular Beam Epitaxy and their Application on Novel Optoelectronic Devices

摘要: 半导体量子点因其具有类原子的分立能级结构，可在三维方向上对载流子运动进行束缚，因此被认为是光发射器件（激光器、量子光源等）极具前景的有源物质之一。其器件的性能强烈依赖于量子点材料的品质、光场与量子点偶极子场的有效相互作用等。本文将从半导体InAs/GaAs自组织量子点的可控分子束外延生长调控技术出发，进一步探讨应用于光通信、片上光互联领域的量子点激光器，以及应用于光量子信息领域的高品质量子光源器件。

Abstract: Epitaxial quantum dots (QDs) are a promising candidate for opto-electronic devices (lasers, quantum light sources, etc.) due to their atom-like discrete energy levels, which can trap electrons/holes in all three dimensions. The performance of the devices strongly depends on the quality of the QD material and the effective interaction between the light field and the QD dipole. In this paper, we will start from the growth of high performance InAs/GaAs QDs using molecular beam epitaxy, and then the QD lasers applied in optical communication and on-chip optical interconnection, as well as high-quality QD based quantum light sources for photonic quantum information, will be further discussed.