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CeO2缓冲层层数对YBa2Cu3O7-σ超导薄膜载流能力的影响

Effect of the CeO2 Buffer Layers Number on Current-Carrying Capacity of YBa2Cu3O7-σ Superconducting Thin Films

  • 摘要: 为了提高超导薄膜的载流能力,本文通过MOCVD法,在1-5层(100)取向的氧化铈缓冲层薄膜上制备YBa2Cu3O7-σ薄膜。研究了缓冲层层数对YBa2Cu3O7-σ薄膜物相组成、结晶度、面内取向、微观形貌和超导性能的影响。结果表明,当缓冲层数为1-2时,薄膜呈现高度(001)取向生长;当缓冲层数为4-5时,薄膜呈现高度(110)取向生长。其中氧化铈薄膜层数为1时,YBCO薄膜结晶度和面内取向最好,其ωФ扫描曲线的FWHM值分别为2.63°和5.21°;随着缓冲层数的增加,YBCO薄膜结晶度和面内取向均呈现变差的趋势。氧化铈缓冲层与YBCO薄膜之间的外延生长关系为YBCO001//CeO2100和YBCO010//CeO2011。缓冲层数为1的YBCO薄膜表面主要由大面积c轴取向的晶粒组成,其厚度为485 nm,沉积速率为4.85μm/h,其液氮温度(77 K)下的临界电流为20.8 A,相比于缓冲层数为0的超导薄膜临界电流有所提升。

     

    Abstract: In order to improve the current-carrying capacity of superconducting thin films,YBa2Cu3O7-σ thin films were prepared on 1-5 layer(100) oriented cerium oxide buffer films by MOCVD.Effects of buffer layers on the phase composition,crystallinity,in-plane orientation,microstructure,and superconductivity of YBa2Cu3O7-σ films were investigated.Results show that YBCO films grow in a high(001) orientation with buffer layers number being 1-2 and grow in a high(110) orientation with buffer layers number being 4-5.The crystallinity and in-plane orientation of YBCO film are the best with buffer layers number being 1,with FWHM values of ω and Ф scanning curves being 2.63°and 5.21°,respectively.The crystallinity and in-plane orientation of YBCO films become worse with the increase of buffer layers.Epitaxial growth relationship between cerium oxide buffer layer and YBCO film is YBCO001//Ce O2 100 and YBCO010//CeO2011.The surface of YBCO film with 1 buffer layer is mainly composed of a large area of c-axis grain,the thickness is 485 nm,the deposition rate is 4.85μ m/h,and the critical current is 20.8 A at liquid nitrogen temperature(77 K),which is higher than that of the superconducting film without buffer layer.

     

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