HL-2A装置实时在线硅化壁处理系统
Real-Time Siliconization System on HL-2A Tokamak
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摘要: 为了实时控制等离子体杂质以获得良好的等离子体品质,在HL-2A装置上搭建了实时在线硅化壁处理系统,以开展实时在线硅化实验研究。系统采用压电晶体阀控制送气流量,并由HL-2A中控系统时序作为阀门控制的触发信号。在偏滤器位形和孔栏位形放电条件下开展了初步的实时在线硅化实验,研究不同硅化气体注入参数对不同位形等离子体放电参数的影响。实验结果表明,硅化气体注入后等离子体线平均密度整体增加;而Dα、SiV辐射强度以及等离子体总热辐射功率只在注入期间增加,随后基本恢复到本底水平。高幅值短脉冲注入对等离子体参数的扰动比低幅值长脉冲明显,因此在线硅化实验宜采用低幅值长脉冲的形式开展。由环向Dα诊断系统对硅化气体在环向的镀膜范围进行了大致评估,结果表明单个注入口的镀膜范围有限,需要适当增加送气口来实现均匀镀膜。Abstract: In order to control the plasma impurity during plasma discharge, a real-time siliconization system was built on HL-2A tokamak. A piezoelectric valve was employed to control the injection flow rate, and the control sequence of the HL-2A central control system was utilized as the trigger signal. The gas injection function and the sequential control were tested and proven with good stability and repeatability. Preliminary real-time siliconization experiment with different injection parameters was performed under HL-2A divertor and limiter plasma discharge condition, to study their impact on the plasma parameters. The experiment results show that the total line-average density increases after gas injection, while Dαand SiV only increase during the injection phase. A short-width injection pulse with high amplitude causes a larger perturbation on the plasma than that of a long-width pulse with low amplitude, indicating that a long-width pulse with low amplitude may be more suitable for the experiment. The coating area of one injection point is limited, which was evaluated by the Dαsignal in the toroidal direction, indicating that more injection points are necessary to obtain a uniform effect.