基于表面织构化衬底的石墨烯边缘场发射研究
Field Emission Properties of Graphene Edge Based on Surface Textured Substrates
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摘要: 石墨烯缘于优异的导电性和丰富的电子隧穿边缘,是场发射阴极的良好材料,而CVD法是低成本制备大面积高质量石墨烯的方法,但生长出来的石墨烯平行于衬底,形貌不利于场发射的进行。为解决单层石墨烯的问题,本文提出一种激光表面织构技术提高石墨烯场发射性能的方法。通过激光表面织构技术,烧蚀铜箔表面,制造具有一定织构的表面形貌。通过表面织构技术结合CVD法生长石墨烯,进行表征和场发射性能测试。结果表明,相比于原样品,织构化铜箔上生长的石墨烯场发射阴极的开启电场降低了11%,场增强因子提高了170%,说明场发射边缘的利用得到了提升,为提高石墨烯场发射性能提供一种新思路。Abstract: Chemical vapor deposition(CVD)is a low-cost method for preparing large-area high-quality graphene, but the morphology of the grown graphene is not conducive to field emission because it is parallel to the substrate. In this paper, a method to enhance the field emission performance of graphene by laser surface texturing is proposed. A surface morphology with a certain texture is produced by laser ablation of the surface of the copper foil,and then graphene is grown on the copper foil by chemical vapor deposition. The samples were characterized and tested for field emission performance. The results show that the turn-on electric field of the graphene field emission cathode grown on the textured copper foil is reduced by 11%, and the field enhancement factor is increased by 170%. The investigation of this paper provides a new idea for improving the field emission performance of graphene.