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基于二维半导体的模拟电路最新进展

Recent Progress in Analog Circuits Based on Two-Dimensional Semiconductors

  • 摘要: 摩尔定律驱动的器件持续微缩已经开始给硅基晶体管的模拟性能带来潜在问题,其中本征增益作为最重要的模拟指标会随着技术节点的缩小而降低。二维半导体因其平坦的界面、原子级厚度的几何结构,允许极好的栅静电控制,并且不受短通道效应的影响而引起了广泛的关注。这些优异的特性使二维半导体在提高模拟电路性能中表现出巨大的潜力。本文中,我们回顾了基于二维半导体的模拟电路的最新研究进展。文章首先介绍了衡量模拟电路性能的重要指标,然后重点介绍了基于二维半导体的单级放大器的实现、接触工程、和互补技术,并进一步讨论了基于二维晶体管的复杂电路,如电流镜、运算放大器、射频电路。最后我们讨论了基于二维晶体管的模拟电路的应用前景和面临的关键挑战。

     

    Abstract: Aggressive device scaling has begun to pose potential problems to the analog performance of silicon transistors,in which the intrinsic gain,one of the most important analog metrics,degrades as the technology node scales down.Two-dimensional (2D) semiconductors have attracted extensive research interests due to pristine surface and atomic body thickness,which allows excellent gate electrostatic control and is immune to short channel effect,resulting in constantly flat output curves for high output impedance and high intrinsic gain.Hence,a considerable amount of effort has been devoted to achieving analog circuits with two-dimensional semiconductors.In this paper,we review the recent progress of analog circuits based on two-dimensional semiconductors.We first discuss the performance metrics that are widely used in analog circuits.Then,we focus on various reported approaches for 2D single-stage amplifiers with basic operation,contact engineering and complementary approaches.Next,more complex circuits based on 2D semiconductors (current mirror,operational amplifier,radio frequency circuit) are discussed.Finally,the application prospect and key challenges of analog circuits based on 2D transistors are discussed.

     

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