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基体偏压对高功率脉冲磁控溅射CrN薄膜结构及阻氢性能的影响

Effect of Substrate Bias on Structure and Hydrogen Resistance of CrN Thin Films Prepared by High Power Pulsed Magnetron Sputtering

  • 摘要: 氢在金属材料中主要做原子扩散,而在陶瓷材料中主要做分子扩散,因此渗透率相对于金属材料比较低,因此可以通过在金属材料表面溅射一层陶瓷薄膜,降低氢的扩散系数,从而起到保护基体材料的效果。本文采用高功率脉冲磁控溅射技术在316L不锈钢基体上溅射CrN薄膜。Cr靶外加直流复合脉冲式HiPIMS电源,控制基体偏压分别为100、200、300和400V,时间为60 min,四组CrN薄膜的渗氢抑制率均超过75%,最高可达94.8%,氢原子扩散系数最高可比316L不锈钢基体低3个数量级。此外,针对高温时氮化物薄膜会因为发生氧化反应生成其他化合物而导致薄膜阻氢性能下降的问题,本文在600℃、纯氧气气氛下验证薄膜的高温抗氧化性。结果表明本文制备的CrN阻氢薄膜在相同条件下氧的增重量仅为316L不锈钢基体的50%,本身具备优良的抗氧化性能。

     

    Abstract: Hydrogen diffuses in the form of atoms in metal materials, while in the form of molecules in ceramic materials, and its permeability is relatively low compared with that of metal materials. Therefore, a layer of ceramic film can be sputtered on the surface of metal materials to reduce the diffusion coefficient of hydrogen, thus playing the effect of protecting the matrix material. In this paper, high power pulse magnetron sputtering technique was used to sputter CrN films on a 316 L stainless steel substrate. Under the control of substrate bias voltage of 100, 200,300 and 400 V, respectively, for 60 min, the hydride inhibition rate of the four groups of CrN films is more than 75%, and the maximum is 94.8%. Compared with 316 L stainless steel, the hydrogen diffusion coefficient of CrN is three orders lower. In addition, in view of the problem that the hydrogen resistance of the nitride film will decrease due to the oxidation reaction to form other compounds at high temperature, this paper verified the high temperature oxidation resistance of the film at 600℃ and in the atmosphere of pure oxygen. The results show that under the same conditions, the weight gain of oxygen in the prepared CrN hydrogen-inhibiting film is only 50% of that of 316 L stainless steel substrate, and it has excellent oxidation resistance.

     

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