Abstract: Copper thin films were prepared on aluminum nitride(AlN)polycrystalline substrate by chemical vapor deposition (CVD) using Cu(DPM)₂ as a precursor at deposition temperatures(T_dep)range from 673 K to1173 K. Effects of T_depon the phase composition,preferred orientation,macroscopic surface,microstructure,elemental composition,and conductance of the Cu thin film were investigated. The aeneous Cu films with (111) preferred orientation were prepared at 873 K to 1173 K;meanwhile,(200) and (220)orientations existed. And Cu grains grew in island growth mode from 873 K to 1173 K. As T_depincreased,the conductivity of the film first increased and then decreased. The purest and aeneous Cu film with the best conductivity and high(111)preferred orientation was obtained at 1073 K. It was confirmed that 1073 K was the best deposition temperature for the preparation of copper films.