高级检索

三元层状氮化物Ti2AN(A=Al,Ga)材料的合成及电学性质研究

Synthesisand Electrical Properties of Layered-Ternary Nitrides Ti2AN (A=Al, Ga)

  • 摘要: 三元层状陶瓷材料(Mn+1AXn)因其具有独特的力学、热学和电学性能而备受关注。本文以单质Ti,Al,TiN粉为原料,按摩尔比1∶1∶1称量后混料,用等离子放电热压烧结(SPS)方法合成了Ti2AlN多晶块状材料;以单质Ti,GaN粉为原料,按摩尔比2∶1称量后混料,用封管烧结方法合成了Ti2GaN多晶块状材料。利用X射线衍射和扫描电镜表征物相和微观结构,并研究其导电性质,结果表明:Ti2AlN、Ti2GaN样品均为单相,呈层状结构,化学组成与理论成分基本一致,电阻率从300到5 K逐渐降低,呈现金属性,5K以上未发现超导特性。

     

    Abstract: The bulk polycrystalline Ti2AlN,an advanced layered ternary ceramics(Mn+1AXn),was synthesized by spark plasma sintering(SPS) of Ti,Al and TiN powders with a molar ratio of 1∶1∶1;and the bulk polycrystalline Ti2GaN was grown by sintering the compressed Ti and GaN powders with a molar ratio of 2∶1 in a sealed quartz glass-tube.The influence of the synthesis conditions on the microstructures and electrical properties,particularly low-temperature superconductivity,was investigated with X-ray diffraction,energy dispersive X-ray spectroscopy and scanning electron microscopy.The preliminary results show that the single-phased,layered Ti2AlN and Ti2GaN had the ideal stoichiometry and typical metallic conductivity.To be specific,as the temperature decreased from 300 to 5 K,the resistivity of Ti2AlN and Ti2GaN nitrides decreased and no superconductivity was observed at a temperature above 5 K.

     

/

返回文章
返回