Effect of RF-PECVD Growth Parameters on the Quality of Graphene Films

The paper compares the morphology and quality of graphene films grown under different process conditions, and studies the effects of high-frequency power, discharge voltage, gas flow ratio, growth time, substrate temperature and substrate type on the quality of graphene films prepared by RF-PECVD in dual-frequency discharge. The experimental results show that the concentration of defects in graphene decreases with the increase of high-frequency power, but the thickness of the film decreases with the increase of high-frequency power. Under the conditions of 3 Torr and 5 Torr, graphene films may have more boundary defects. When the flow ratio of methane/argon is 10:30 and the growth time is 40 min, graphene films of good quality can be grown. The growth temperature has a great influence on the growth of graphene films, and at 300℃, graphene films cannot grow on the surface of nickel substrates, and when the growth temperature is lower than 600℃, graphene films with better quality cannot be grown. Finally, it is found that under the same growing conditions, the graphene film grown on the nickel substrate is less thick, but the graphene film grown on the copper substrate had fewer defects and better quality, which is related to the different growth modes of the film on the two substrates.