Preparation and Characterization of Titanium-Zirconium-Vanadium Non-Evaporable Getter Film Based on Porous Silicon Scaffold

The non-evaporable getter film has been extensively researched and applied in the field of vacuum technology in recent years. However, its further development is hindered by limited adsorption rate and capacity. In this study, a porous silicon scaffold was prepared using the double-tank electrochemical corrosion method, followed by the deposition of non-evaporable titanium-zirconium-vanadium (Ti-Zr-V) getter film through DC magnetron sputtering to obtain three-dimensional (3D) film getter. The morphology and gas adsorption performance of the film getter were investigated using high-resolution field emission scanning electron microscopy, thermogravimetric analyzer, and hydrogen adsorption test, respectively. The results of the hydrogen adsorption performance test revealed that films with a thickness of 400 nm deposited on both silicon wafer and porous silicon exhibited maximum adsorption rates of 0.035 L·s⁻¹·cm⁻² and 0.100 L·s⁻¹·cm⁻², representing an increase of 185.71%. Furthermore, their respective adsorption capacities were measured as 0.143 Pa·L·cm⁻² and 0.353 Pa·L·cm⁻² which increased by 146.85%. Depositing the film on a porous silicon scaffold enhanced the specific surface area and porosity of the film getter, thereby increasing contact between gas molecules and the getter surface, leading to improved gas molecule adsorption and diffusion processes within it, thus effectively enhancing its overall adsorption performance.