The Mechanism and the Prevention of Plasma Enhanced Atomic Layer Deposition Induced Polysilicon Damage

In this study, electron beam inspection (EBI) was used to investigate the mechanism of irreversible damage caused by by-products of the aminosilane precursors during the deposition of silicon oxide thin films with plasma enhanced atomic layer deposition (PEALD). It is proposed to replace polyamine based aminosilane with monoamine based aminosilane as precursors to reduce the damage to polysilicon materials. The effect of monoamine based diisopropylamine (DIPAS) precursors with small steric hindrance on the reaction rate of PEALD silicon oxide was studied without the damage of polysilicon.