Influence of Mg85Ni15 Anti-Reflection Layers on Photoelectric Properties of the VO2 Thin Films on Glass Substrate
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Abstract
A monoclinic phase of vanadium dioxide (M-VO2) film was grown on an amorphous glass substrate by pulsed laser deposition technique, and the effect of the Mg85Ni15 anti-reflection layers on the M-VO2 film was investigated. The experimental results show that the M-VO2 film prepared on the amorphous glass substrate has a single orientation and high purity. As an anti-reflection layer, Mg85Ni15 improves the visible light transmittance and solar energy adjustment rate of the film. By optimizing the thickness of the anti-reflection layer, it is found that when the thickness of the anti-reflection layer is 60 nm, the phase transition temperature is the lowest and the thermal hysteresis width is the narrowest at 6℃. The development of this work is conducive to promoting the application of VO2 thin films in smart windows.
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