Research on Ultralow-Voltage Operating Ag Nanowire Network-Based Resistive Device

Random Ag nanowire network with high density and adaptive properties can mimic the complex network topology of neurons and has a wide range of applications in the field of information storage, selectors, and neuromorphic computing. In this work, Ag nanowire devices are prepared on a patterned electrode substrate by a spin-coating process to investigate the impact of the concentrations and diameters of Ag nanowire on their electrical properties. The results show that the random network prepared by Ag nanowires with diameter of 30 nm and composite solutions with concentrations of 5 wt% can achieve controllable high switching resistance behavior. Furthermore, the resistive behavior with large switch is used as the initialization process of the device to achieve controllable synaptic plasticity behavior, which can respond to ultra-low voltage. Finally, the working mechanism of random Ag nanowire networks under different electrical stimulation is proposed by an investigation into the formation and rupture process of Ag nanofilaments in individual nanojunctions. This work provides new ideas for the physical realization and application of random network in the field of novel neuromorphic device.