High Quality InAs/GaAs Self-Assembled Quantum Dots Grown by Molecular Beam Epitaxy and their Application on Novel Optoelectronic Devices

Epitaxial quantum dots (QDs) are a promising candidate for opto-electronic devices (lasers, quantum light sources, etc.) due to their atom-like discrete energy levels, which can trap electrons/holes in all three dimensions. The performance of the devices strongly depends on the quality of the QD material and the effective interaction between the light field and the QD dipole. In this paper, we will start from the growth of high performance InAs/GaAs QDs using molecular beam epitaxy, and then the QD lasers applied in optical communication and on-chip optical interconnection, as well as high-quality QD based quantum light sources for photonic quantum information, will be further discussed.