Study on Single Crystal β-Ga2O3 Thin Films Grown by MOCVD Homoepitaxy

CHEN Chen; HAN Zhao; ZHOU Xuanze; ZHAO Xiaolong; SUN Haiding; XU Guangwei; LONG Shibing

doi:10.13922/j.cnki.cjvst.202204021

CHINESE JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY > 2023 > 43(3): 202-209. > DOI: 10.13922/j.cnki.cjvst.202204021

CHEN Chen, HAN Zhao, ZHOU Xuanze, ZHAO Xiaolong, SUN Haiding, XU Guangwei, LONG Shibing. Study on Single Crystal β-Ga₂O₃ Thin Films Grown by MOCVD Homoepitaxy[J]. CHINESE JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY, 2023, 43(3): 202-209. DOI: 10.13922/j.cnki.cjvst.202204021

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Study on Single Crystal β-Ga₂O₃ Thin Films Grown by MOCVD Homoepitaxy

School of Microelectronics, University of Science and Technology of China, Hefei 230026, China

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Received Date: April 21, 2022
Available Online: February 08, 2023

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Abstract

Abstract

Ga₂O₃ films were homoepitaxy grown on Fe-doped Ga₂O₃ (010) semi-insulating substrate by metal-organic chemical vapor deposition (MOCVD). The effects of chamber temperature (880/830/780/730℃) and pressure (80/60/40/20 Torr) on the surface morphology, crystal quality and electrical properties of epitaxial films were systematically investigated. The results show that with the increasement of the growth temperature and pressure, the growth rate of the films increases slightly and decreases dramatically, respectively; The growth pattern of step bunching on the surface of the films is gradually enhanced, and the morphology is dominated by elongated grains oriented along the [001] direction; High resolution X-ray diffraction (XRD) scanning shows that only diffraction peaks exist on (020) plane, which indicates that the films are pure β-phase single crystal, and the full width at half maximum can reach 45.7 arcsec; Hall test shows that the film has the highest room temperature electron mobility under the growth conditions of 780℃ and 60 Torr, respectively. This paper provides a systematic parameter guidance for the homoepitaxy growth of Ga₂O₃ based on MOCVD, and lays a foundation for the preparation of high-quality Ga₂O₃ films.
- Ga₂O₃,
- MOCVD,
- Homoepitaxy,
- Growth temperature,
- Growth pressure

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References

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Study on Single Crystal β-Ga2O3 Thin Films Grown by MOCVD Homoepitaxy

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Study on Single Crystal β-Ga₂O₃ Thin Films Grown by MOCVD Homoepitaxy