Developmentof Silicon Micro-Resonant Pressure Sensor: A Simulation Study

A novel Si micro-resonant pressure sensor,a micro electro mechanical system(MEMS) device and operating in electrostatic-excitation/capacitance-detection mode,was developed.The original work included:addition of beams on both sides of fixed-fixed resonant beam to suppress Z-direction displacement,and design of double-sided comb-like structure and composite temperature-compensation beam to increase detection sensitivity.The newly-designed pressure-sensor was mathematically modeled,theoretically analyzed and numerically simulated with ANSYS software for design optimization and performance evaluation.The simulated results show that the new pressure sensor outperforms the conventional one because of higher sensitivity and better stability.For instance,the resonator with an intrinsic frequency of 29.834 kHz,has better positive stress characteristics in 0~100 MPa range and greater sensitivity up to 29.6 Hz/kPa in 0~120 kPa range.Moreover,its good frequency stability,at highest over-voltage of 1.5×FS,indicates that the novel sensor meets the stringent requirements on sensitivity and over-voltage resistance.