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Jiang Biao, Yu Zhenhua, Gan Jing, Wang Yongjian, Meng Donghui, Li Mingli, Sun Lichen, Wang Xudi. Fabricationand Characterization of Novel Si-Based Standard Leak with Controllable Conductance:An Experimental Study[J]. CHINESE JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY, 2019, 39(4): 345-349. DOI: 10.13922/j.cnki.cjovst.2019.04.12
Citation: Jiang Biao, Yu Zhenhua, Gan Jing, Wang Yongjian, Meng Donghui, Li Mingli, Sun Lichen, Wang Xudi. Fabricationand Characterization of Novel Si-Based Standard Leak with Controllable Conductance:An Experimental Study[J]. CHINESE JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY, 2019, 39(4): 345-349. DOI: 10.13922/j.cnki.cjovst.2019.04.12

Fabricationand Characterization of Novel Si-Based Standard Leak with Controllable Conductance:An Experimental Study

  • A novel standard-leak with controllable molecular flow conductance was developed, comprising two glycol bonded Si-chips with gas inlet/outlet holes:one has surface micro-fluidic channels (~1 μm deep) fabricated by lithography and the other serves as the top-cover.The conductance can be well-controlled by adjusting the size/number of micro-channels.The constant conductance via the novel Si-based standard-leak, installed between two F35 flanges and sealed with indium gasket, was characterized with helium leak detector, scanning electron microscopy and atomic force microscopy.The measured results show that the new Si-based standard-leak is capable of providing a constant conductance of helium molecular flow in the up-stream pressure range from high vacuum up to 30000 Pa.The measured and calculated results were found to be in fairly good agreement with a relative error of approximately 22.2%.
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