Experimental Study of Velocity Distributions in Film Growth Reaction Chamber

The distributions of velocity and pressure, in vacuum chamber of plasma enhanced chemical vapor deposition film growth reactor for integrated circuit fabrication, were mathematically modeled, experimentally measured and analytically described.The influence of the deposition conditions, including the pressure, flow-rate of intake-air, temperature and wafer-holder height (from chamber's bottom to wafer-holder's top), on the profiles of velocity and pressure was investigated with laser Doppler velocimeter and TC-wafer.The preliminary results show that the deposition conditions all have a major impact.As the flow-rate of intake air and temperature increased, the velocity increased;as the pressure and wafer-holder height increased, the velocity decreased.Their influence on the velocity and velocity profiles could be listed in a descending order:the pressure>flow-rate of intake air>temperature>height.