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Research Progress of High-Pressure Cryopreservation for Multiscale Living Materials
CHANG Tie, WEI Siyuan, AN Qi, SONG Qingya, ZHANG Bing, ZHAO Gang
2022, 42(2): 83-93. DOI: 10.13922/j.cnki.cjvst.202111004
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Upgrade and Experimental Studies of EAST Glow Discharge Cleaning Electrode
CAO Hongmei, YU Yaowei, CAO Bin, ZHOU Deze, ZUO Guizhong, HU Jiansheng
2022, 42(2): 94-98. DOI: 10.13922/j.cnki.cjvst.202109006
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Properties of Transparent SiOxCyHz Barrier Film Prepared by PECVD
DONG Maojin, FENG Yudong, HAN Xianhu, CAI Yuhong, QIN Lili, WANG Yi, WANG Guan, MA Fengying, WANG Jizhou
2022, 42(2): 99-103. DOI: 10.13922/j.cnki.cjvst.202105015
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Structure and Photoelectric Performance of Al-Doped Copper Nitride Thin Films Prepared by Magnetron Sputtering
CUI Xinyu, WU Wenjing, LU Xueliang, PENG Xiangwei, XIAO Jianrong
2022, 42(2): 104-109. DOI: 10.13922/j.cnki.cjvst.202107010
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Rotor Form Machining and its Form Cutter Calculation for Dry Screw Vacuum Pumps
LI Dantong, HE Zhilong, XING Ziwen
2022, 42(2): 110-117. DOI: 10.13922/j.cnki.cjvst.202108002
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Optimization and Analysis on Electric Field of Vacuum Interrupter Based on HVG
MA Shiqi, LIU Xiaoming, CHEN Hai, JIANG Wentao, LI Peiyuan
2022, 42(2): 118-124. DOI: 10.13922/j.cnki.cjvst.202104019
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Analysis on the Efficiency of Millimeter-Band Spatial-Harmonic Magnetron
LI Shengen, LI Fengling, LEI Xuefeng, WANG Dongdong
2022, 42(2): 125-131. DOI: 10.13922/j.cnki.cjvst.202106014
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Design Methodology and Geometric Performance Analysis of Variable Cross-Section Twin-Screw Vacuum Pump
ZHAO Lizhuang, ZHAO Xihao, WANG Jun, SHA Rundong, WANG Zengli, GENG Maofei
2022, 42(2): 132-138. DOI: 10.13922/j.cnki.cjvst.202109007
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Simulation of Gas Liquid Two Phase Flow in Water Ring Vacuum Pump by VOF Model
ZHENG Zhifu, MENG Fanrui, ZHAO Guoyong, ZHAO Yugang, XU Shuang, LI Chunxiao
2022, 42(2): 139-144. DOI: 10.13922/j.cnki.cjvst.202103009
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Parameter Optimization and Simulation Analysis of Vacuum Drying Oven Based on FLUENT
YU Yang, JIA Zhiqi, YANG Guofeng, REN Yubin, WANG Guan, WANG Qiang, CHEN Tingmin
2022, 42(2): 145-150. DOI: 10.13922/j.cnki.cjvst.202106029
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Theoretical Analysis of Material Mechanism and Device Characteristics in N-Polar GaN/In0.17Al0.83N High Electron Mobility Transistor
WANG Xianbin, GAO Yanyan, ZHOU Shufen
2022, 42(2): 151-158. DOI: 10.13922/j.cnki.cjvst.202106008
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