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余天翔, 薛转转, 武鹏远, OleksiyPenkov. 低能等离子体轰击对单晶硅表面性能的影响[J]. 真空科学与技术学报. DOI: 10.13922/j.cnki.cjvst.20205013
引用本文: 余天翔, 薛转转, 武鹏远, OleksiyPenkov. 低能等离子体轰击对单晶硅表面性能的影响[J]. 真空科学与技术学报. DOI: 10.13922/j.cnki.cjvst.20205013
YU Tianxiang, XUE Zhuanzhuan, WU Pengyuan, Oleksiy Penkov. The Effect of Low-energy Plasma Bombardment on the Surface Properties of Monocrystalline Silicon[J]. CHINESE JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY. DOI: 10.13922/j.cnki.cjvst.20205013
Citation: YU Tianxiang, XUE Zhuanzhuan, WU Pengyuan, Oleksiy Penkov. The Effect of Low-energy Plasma Bombardment on the Surface Properties of Monocrystalline Silicon[J]. CHINESE JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY. DOI: 10.13922/j.cnki.cjvst.20205013

低能等离子体轰击对单晶硅表面性能的影响

The Effect of Low-energy Plasma Bombardment on the Surface Properties of Monocrystalline Silicon

  • 摘要: 为了研究低能等离子体轰击对单晶硅表面物理性能的影响。通过控制刻蚀时间和真空腔内气体压强等因素,使用低能等离子体对单面抛光单晶硅(100)进行刻蚀。通过测量刻蚀后硅片的刻蚀深度、硅片表面粗糙度、拉曼光谱以及接触角,研究硅片表面物理性能的变化。实验结果表明,随着刻蚀时间的增加,硅片刻蚀深度基本不变,而随着刻蚀压力的增加,硅片刻蚀深度先减小后增加。当刻蚀电流为0.1 A,气体压力为2 mTorr时,硅片表面粗糙度在刻蚀时间为40 s时达到极小值。对刻蚀后硅片的拉曼光谱进行测量,发现拉曼二阶峰在总体上随刻蚀时间的增加而略微降低。分别使用氩离子和氮离子对硅片进行刻蚀,发现两者在空气中保存一段时间后水滴角均会有不同程度的增加。将刻蚀后的硅片分别置于氩气、氮气和空气环境中保存,硅片表面水滴角变化趋势几乎完全一致。证明低温等离子体轰击在较短的刻蚀时间内对硅片厚度没有明显影响,对硅片表面的粗糙度有一定的提高效果,对硅片表面的润湿性也起到了一定的减小作用,其中氩离子轰击处理的硅片更是在保存一段时间后发生了由亲水性到疏水性的转变。

     

    Abstract: To investigate the effect of low-energy plasma bombardment on the surface physical properties of monocrystalline silicon. By controlling factors such as etching time and gas pressure inside the vacuum chamber, low-energy plasma is used to etch single-sided polished monocrystalline silicon (100). By measuring the etching depth, surface roughness, Raman spectroscopy, and contact angle of the silicon wafer after etching, the changes in the physical properties of the silicon wafer surface are studied. The experimental results show that as the etching time increases, the etching depth of the silicon wafer remains basically unchanged, while as the etching pressure increases, the etching depth of the silicon wafer first decreases and then increases. When the etching current is 0.1 A and the gas pressure is 2 mTorr, the surface roughness of the silicon wafer reaches a minimum value at an etching time of 40 s. The Raman spectra of the etched silicon wafers were measured, and it was found that the Raman second-order peak decreased slightly overall with increasing etching time. Silicon wafers were etched using argon ions and nitrogen ions respectively, and it was found that both showed varying degrees of increase in droplet angle after being stored in air for a period of time. The etched silicon wafers were stored separately in argon, nitrogen, and air environments, and the trend of water droplet angle changes on the surface of the silicon wafers was almost identical. Low temperature plasma bombardment has no significant effect on the thickness of silicon wafers in a short etching time, but has a certain effect on improving the surface roughness of silicon wafers and reducing the wettability of silicon wafers. Among them, silicon wafers treated with argon ion bombardment undergo a transition from hydrophilicity to hydrophobicity after being stored for a period of time.

     

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