Abstract: With the advent of the "Internet of things" and the demand for smart chips launched by the "Internet of things",MEMS(Micro-Electro-Mechanical System)devices have been developing rapidly all over the world.Up-market MEMS devices need to install getter inside. It is the key material to maintain the vacuum degree,long life and high sensitivity of the MEMS devices,which is of great significance. In this paper,the development process of non-evaporable getter is introduced from two different forms of getter:film and block. The preparation process,alloying modification,activation temperature and getter performance of Zr based and Ti based getter at home and abroad are analyzed. Film getter is mainly produced by physical vapor deposition(PVD),we adjust the process parameters to form orderly porous nano crystal structure in its interior,so as to achieve the purpose of high suction capacity and low activation temperature. The process focuses on improving the porosity and specific surface area of the film. The bulk getter is mainly made by powder metallurgy sintering. After suction,the alloy gradually begins to pulverize and expose the fresh suction surface,so as to achieve continuous suction. At present,It needs to be improved that there is little research on the early stage technology that affects the powder removal of block getter.Finally,the future research direction of non-evaporable getters is prospected.