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三元层状氮化物Ti2InN材料的合成及电学性质研究

Synthesis and Electrical Properties of Layered-Ternary Nitride Ti2InN

  • 摘要: 以TiN,In粉,Ti粉为原料,用封管烧结方法合成了Ti2InN多晶块体材料。用X射线衍射和扫描电镜表征物相和微观结构,并测试了Ti2InN样品电阻率随温度的变化。结果表明:Ti2InN样品表现为单相,呈良好的层状结构,化学组成与理论成分基本一致,电阻率随温度从300到5 K逐渐降低,5 K以上没有发现超导特性。

     

    Abstract: Bulk layered-ternary nitride Ti2InN,a high-tech metal-ceramic material,was synthesized by sintering,at 900℃ in vacuum furnace, the compressed blank,comprising TiN,In and Ti powders and enclosed in a sealed quartz ampoule.The influence of the molar ratio on the microstructures,phase structures and electrical properties of the ternary nitride was investigated with X-ray diffraction,energy dispersive X-ray spectroscopy and scanning electron microscopy.The results show that the single-phased Ti2InN,with a Cr2AlC structure(belonging to P63/mmc space group) and with an approximately ideal stoichiometry,was obtained by sintering the blank fabricated with an optimized molar ratio of TiN:In:Ti(1:0.95:1.1).As the temperature decreased from 300 to 5 K,the resistivity of the layered ternary nitride Ti2InN decreased,displaying a good electrical conductivity of metals; and at a temperature above 5 K no superconductivity was observed.

     

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